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IRF231 Datasheet(PDF) 1 Page - Intersil Corporation |
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IRF231 Datasheet(HTML) 1 Page - Intersil Corporation |
1 / 7 page 1 Semiconductor Features • 8.0A and 9.0A, 150V and 200V •rDS(ON) = 0.4Ω and 0.6Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17412. Symbol Packaging JEDEC TO-204AA Ordering Information PART NUMBER PACKAGE BRAND IRF230 TO-204AA IRF230 IRF231 TO-204AA IRF231 IRF232 TO-204AA IRF232 IRF233 TO-204AA IRF233 NOTE: When ordering, use the entire part number. G D S DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) October 1997 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 1568.2 IRF230, IRF231, IRF232, IRF233 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs |
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Descripción similar - IRF231 |
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