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IRF840 Datasheet(PDF) 2 Page - Intersil Corporation |
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IRF840 Datasheet(HTML) 2 Page - Intersil Corporation |
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2 / 7 page  4-258 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified IRF840 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 500 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 500 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 8.0 A TC = 100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 5.1 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 32 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 125 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS 510 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA (Figure 10) 500 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V Zero-Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS,VGS = 0V, TJ = 125 oC - - 250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 8.0 - - A Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 4.4A (Figures 8, 9) - 0.8 0.85 Ω Forward Transconductance (Note 2) gfs VDS ≥ 50V, ID = 4.4A (Figure 12) 4.9 7.4 - S Turn-On Delay Time tD(ON) VDD = 250V, ID ≈ 8A, RG = 9.1Ω, RL = 30Ω MOSFET Switching Times are Essentially Independent of Operating Temperature. -15 21 ns Rise Time tr -21 35 ns Turn-Off Delay Time tD(OFF) -50 74 ns Fall Time tf -20 30 ns Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 8A, VDS = 0.8 x Rated BVDSS Ig(REF) = 1.5mA (Figure 14) Gate Charge is Essentially Independent of Operating Temperature -42 63 nC Gate to Source Charge Qgs - 7.0 - nC Gate to Drain “Miller” Charge Qgd -22 - nC Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 1225 - pF Output Capacitance COSS - 200 - pF Reverse-Transfer Capacitance CRSS -85 - pF Internal Drain Inductance LD Measured from the Contact Screw on Tab to Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances - 3.5 - nH Measured from the Drain Lead, 6mm (0.25in) from Package to Center of Die - 4.5 - nH Internal Source Inductance LS Measured from the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad - 7.5 - nH Thermal Resistance Junction to Case RθJC - - 1.0 oC/W Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 62.5 oC/W LS LD G D S IRF840 |
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Descripción similar - IRF840 |
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