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ADN2850 Datasheet(PDF) 7 Page - Analog Devices

No. de pieza ADN2850
Descripción Electrónicos  Nonvolatile Memory, Dual 1024-Position Digital Resistor
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ADN2850 Datasheet(HTML) 7 Page - Analog Devices

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Data Sheet
ADN2850
Rev. E | Page 7 of 28
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Rating
VDD to GND
–0.3 V to +7 V
VSS to GND
+0.3 V to −7 V
VDD to VSS
7 V
VB, VW to GND
VSS − 0.3 V to VDD + 0.3 V
IB, IW
Pulsed
0F0F
1
±20 mA
Continuous
±2 mA
Digital Input and Output Voltage to GND
−0.3 V to VDD + 0.3 V
Operating Temperature Range
1F1F
2
−40°C to +85°C
Maximum Junction Temperature (TJ max)
150°C
Storage Temperature Range
−65°C to +150°C
Lead Temperature, Soldering
Vapor Phase (60 sec)
215°C
Infrared (15 sec)
220°C
Thermal Resistance
Junction-to-Ambient θJA,TSSOP-16
150°C/W
Junction-to-Ambient θJA,LFSCP-16
35°C/W
Junction-to-Case θJC, TSSOP-16
28°C/W
Package Power Dissipation
(TJ max − TA)/θJA
1
Maximum terminal current is bounded by the maximum current handling of
the switches, maximum power dissipation of the package, and maximum
applied voltage across any two of the A, B, and W terminals at a given
resistance.
2
Includes programming of nonvolatile memory.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION


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