SI2315BDS-3 datasheet(1/5 Pages) KEXIN

No. de pieza	SI2315BDS-3

Descripción Electrónicos	P-Channel Enhancement MOSFET

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MOSFET

P-Channel Enhancement MOSFET

SI2315BDS (KI2315BDS)

■

Features

●

VDS (V) =-12V

●

ID =-3.85A (VGS =-4.5V)

●

RDS(ON) ＜ 50mΩ (VGS =-4.5V)

●

RDS(ON) ＜ 65mΩ (VGS =-2.5V)

●

RDS(ON) ＜ 100mΩ (VGS =-1.8V)

G

S

D

2

3

1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

5 sec

Steady State

Unit

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain Current

*1

Ta = 25℃

-3.85

-3.0

Ta = 70℃

-3.0

-2.45

Pulsed Drain Current *1

IDM

Power Dissipation *1

Ta = 25℃

1.19

0.75

Ta = 70℃

0.76

0.48

Thermal Resistance.Junction- to-Ambient t≤5 sec

Steady State

Thermal Resistance.Junction- to-Foot

RthJF

Junction Temperature

TJ

Storage Temperature Range

Tstg

75

150

-55 to 150

PD

W

RthJA *1

105

166

-12

±

8

ID

-12

V

℃

/W

A

℃

*1Surface Mounted on FR4 board,t ≤ 5

sec.

1. Gate

2. Source

3. Drain

0.4 +0.1

-0.1

2.9 +0.2

-0.1

0.95 +0.1

-0.1

1.9 +0.1

-0.2

1

2

3

Unit: mm

SOT-23-3

0.15 +0.02

-0.02

(TJ =150℃)

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SI2315BDS-3 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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