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SI2325DS Datasheet(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2325DS Datasheet(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
4 / 5 page SMD Type www.kexin.com.cn 4 MOSFET . P-Channel Enhancement MOSFET ■ Typical Characterisitics −0.5 −0.2 0.1 0.4 0.7 1.0 1.3 −50 −25 0 25 50 75 100 125 150 ID = 250 A 1.0 1.4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 0.1 1 3 ID = 0.5 A 0.01 0 1 6 12 2 4 10 600 0.1 0.0 0.2 0.4 0.6 0.8 T J = 150 C Threshold Voltage TJ − Temperature ( C) e g a tl o V e c r u o S - o t- e t a G . s v e c n a t s i s e R - n O e g a tl o V d r a w r o F e d o i D n i a r D - e c r u o S Single Pulse Power VSD − V ) V ( e g a tl o V n i a r D - o t- e c r u o S GS − Gate-to-Source Voltage (V) Time (sec) 8 10 100 TA = 25 C T J = 25 C Safe Operating Area 10 0.1 0 0 0 1 0 1 1 1 . 0 0.001 1 TA = 25 C Single Pulse 0.01 IDM Limited I D(on) Limited *rDS(on) Limited BV DSS Limited 1.2 VDS − Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) isspecified 1 ms 10 ms 100 ms dc, 100 s 10 s 100 s 10 s, 1 s 100 SI2325DS (KI2325DS) |
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