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SI2333CDS-HF Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2333CDS-HF Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 5 page SMD Type www.kexin.com.cn 2 MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -12 V VDS=-12V, VGS=0V -1 VDS=-12V, VGS=0V, TJ=55℃ -10 Gate-Body leakage current IGSS VDS=0V, VGS=±8V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -0.4 -1 V VGS=-4.5V, ID=-5.1A 35 VGS=-2.5V, ID=-4.5A 45 VGS=-1.8V, ID=-2.0A 59 On state drain current *1 ID(ON) VGS=-4.5V, VDS=-5V -20 A Forward Transconductance *1 gFS VDS=-5V, ID=-1.9A 1.6 S Gate Resistance Rg f=1.0MHz 4.0 Ω Input Capacitance Ciss 1225 Output Capacitance Coss 315 Reverse Transfer Capacitance Crss 260 VGS=-4.5V, VDS=-6V, ID=-5.1A 15 25 9 15 Gate Source Charge Qgs 1.9 Gate Drain Charge Qgd 3.8 Turn-On DelayTime td(on) 13 20 Turn-On Rise Time tr 35 60 Turn-Off DelayTime td(off) 45 70 Turn-Off Fall Time tf 12 20 Body Diode Reverse Recovery Charge Qrr 20 40 nC Body Diode Reverse Recovery Time trr 32 50 Reverse Recovery Fall Time ta 16 Reverse Recovery Rise Time tb 16 Maximum Body-Diode Continuous Current IS TC=25℃ -1.0 Pulse Diode Forward Current *1 ISM -20 Diode Forward Voltage VSD IS=-1.0A,VGS=0V -0.7 -1.2 V ns Total Gate Charge Qg VGS=-2.5V, VDS=-6V, ID=-5.1A IF = 1.0 A, di/dt = 100 A/ us,TJ=25℃ A pF nC VGS=-4.5V, VDS=-6V, RL=6Ω,RGEN=1Ω ID=-1.0A ns VGS=0V, VDS=-6V, f=1MHz Zero Gate Voltage Drain Current IDSS μ A mΩ Static Drain-Source On-Resistance *1 RDS(On) *1Pulse test: PW ≤ 300us duty cycle ≤ 2%. ■ Marking Marking O3* F P-Channel MOSFET SI2333CDS-HF (KI2333CDS-HF) |
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