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2SC3279_15 Datasheet(Hoja de datos) 1 Page - SeCoS Halbleitertechnologie GmbH

No. de Pieza. 2SC3279_15
Descripción  NPN Plastic Encapsulated Transistor
Descarga  2 Pages
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Fabricante  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de inicio  http://www.secosgmbh.com
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Elektronische Bauelemente
2SC3279
2A , 30V
NPN Plastic Encapsulated Transistor
18-Feb-2011 Rev. B
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
A
C
E
K
F
D
B
G
H
J
3
Base
1
Emitter
Collector
2
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC current gain and excellent hFE linearity.
Low saturation voltage.
CLASSIFICATION OF hFE
Product-Rank 2SC3279-L
2SC3279-M
2SC3279-N
2SC3279-P
Range
140~240
200~330
300~450
420~600
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
6
V
Collector Current - Continuous
IC
2
A
Collector Power Dissipation
PC
0.75
W
Junction, Storage Temperature
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
30
-
-
V
IC=1mA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
10
-
-
V
IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
6
-
-
V
IE=1mA, IC=0
Collector Cut – Off Current
ICBO
-
-
0.1
µ
A
VCB=30V, IE=0
Emitter Cut – Off Current
IEBO
-
-
0.1
µ
A
VEB=6V, IC=0
DC Current Gain
hFE
140
-
600
VCE=1V, IC=500mA
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
0.82
V
IC=2A, IB=100mA
Base to Emitter voltage
VBE
-
-
1.5
V
VCE=1V, IC=2A
Collector Output Capacitance
Cob
-
27
-
pF
VCB=10V, IE=0, f=1MHz
Transition Frequency
fT
-
150
-
MHz
VCE=1V, IC=0.5A
1
1
1
1Emitter
2
2
2
2Collector
3
3
3
3Base
TO-92
Millimeter
REF.
Min.
Max.
A
4.40
4.70
B
4.30
4.70
C
12.70
-
D
3.30
3.81
E
0.36
0.56
F
0.36
0.51
G
1.27 TYP.
H
1.10
-
J
2.42
2.66
K
0.36
0.76




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