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EN29GL064ATB Datasheet(PDF) 47 Page - Eon Silicon Solution Inc.

No. de pieza EN29GL064ATB
Descripción Electrónicos  64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
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Fabricante Electrónico  EON [Eon Silicon Solution Inc.]
Página de inicio  http://www.essi.com.tw
Logo EON - Eon Silicon Solution Inc.

EN29GL064ATB Datasheet(HTML) 47 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
47
EN29GL064AT/B
Rev. C, Issue Date: 2011/12/01
AC CHARACTERISTICS
Table 21. Write (Erase/Program) Operations
Alternate
CE# Controlled Writes
Parameter
Symbols
Speed
JEDEC
Standard
Description
-70
Unit
tAVAV
tWC
Write Cycle Time
Min
70
ns
tAVEL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tDVEH
tDS
Data Setup Time
Min
30
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time before
Write (OE# High to CE# Low)
Min
0
ns
tWLEL
tWS
WE# SetupTime
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
Write Pulse Width
Min
35
ns
tEHEL
tCPH
Write Pulse Width High
Min
20
ns
Write Buffer Program Operation
(Note 2, 3)
Typ
100
µs
Typ
8
µs
tWHWH1
tWHWH1
Programming Operation
(Byte AND word mode)
Max
200
µs
Typ
0.1
s
tWHWH2
tWHWH2
Sector Erase Operation
Max
2
s
Notes: 1. Not 100% tested.
2. See table.22 Erase and Programming Performance for more information.
3. For 1~16 words bytes programmed.


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