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IRF1010EL Datasheet(PDF) 1 Page - International Rectifier

No. de Pieza. IRF1010EL
Descripción  Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A⑦)
Descarga  10 Pages
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Fabricante  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF1010EL Datasheet(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
02/14/02
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
RθJA
Junction-to-Ambient (PCB mount)**
–––
40
Thermal Resistance
www.irf.com
1
VDSS = 60V
RDS(on) = 12mΩ
ID = 84A
‡
S
D
G
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010EL) is available for low-
profile applications.
Description
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
84
‡
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
59
A
IDM
Pulsed Drain Current

330
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.4
W/°C
VGS
Gate-to-Source Voltage
± 20
V
IAR
Avalanche Current

50
A
EAR
Repetitive Avalanche Energy

17
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
4.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
IRF1010ES
IRF1010EL
D2Pak
IRF1010ES
TO-262
IRF1010EL
l Advanced Process Technology
l Surface Mount (IRF1010ES)
l Low-profile through-hole (IRF1010EL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
°C/W
PD - 91720


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