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2SK3377_15 Datasheet(Hoja de datos) 3 Page - Renesas Technology Corp

No. de Pieza. 2SK3377_15
Descripción  SWITCHING P-CHANNEL POWER MOS FET
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Fabricante  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK3377
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D14328EJ5V0DS00 (5th edition)
Date Published
February 2007 NS CP(K)
Printed in Japan
1999, 2000
DESCRIPTION
The 2SK3377 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low On-state Resistance
RDS(on)1 = 44 m
Ω MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 78 m
Ω MAX. (VGS = 4.0 V, ID = 10 A)
• Low Ciss: Ciss = 760 pF TYP.
• Built-in Gate Protection Diode
• TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±20
A
Drain Current (Pulse)
Note1
ID(pulse)
±50
A
Total Power Dissipation (TC = 25°C)
PT1
30
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Single Avalanche Current
Note2
IAS
15
A
Single Avalanche Energy
Note2
EAS
23
mJ
Notes 1. PW
≤ 10
μs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25
Ω, VGS = 20 → 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3377
TO-251 (MP-3)
2SK3377-Z
TO-252 (MP-3Z)
(TO-251)
(TO-252)
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