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IRF520N Datasheet(PDF) 2 Page - International Rectifier |
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IRF520N Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF520N Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 5.7A, VGS = 0V trr Reverse Recovery Time ––– 99 150 ns TJ = 25°C, IF = 5.7A Qrr Reverse RecoveryCharge ––– 390 580 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics S D G Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.20 Ω VGS = 10V, ID = 5.7A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 2.7 ––– ––– S VDS = 50V, ID = 5.7A ––– ––– 25 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 25 ID = 5.7A Qgs Gate-to-Source Charge ––– ––– 4.8 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 4.5 ––– VDD = 50V tr Rise Time ––– 23 ––– ID = 5.7A td(off) Turn-Off Delay Time ––– 32 ––– RG = 22Ω tf Fall Time ––– 23 ––– RD = 8.6Ω, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 330 ––– VGS = 0V Coss Output Capacitance ––– 92 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 54 ––– ƒ = 1.0MHz, See Fig. 5 nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 5.7A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: V DD = 25V, starting TJ = 25°C, L = 4.7mH RG = 25Ω, IAS = 5.7A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. 9.7 38 A |
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