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SCG2019 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

No. de Pieza. SCG2019
Descripción  P-Channel Enhancement Mode MOSFET
Descarga  4 Pages
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Fabricante  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de inicio  http://www.secosgmbh.com
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SCG2019 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

   
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Any changes of specification will not be informed individually.
Elektronische Bauelemente
SCG2019
-0.62A , -20V , RDS(ON) 810 m
P-Channel Enhancement Mode MOSFET
15-Jul-2014 Rev. B
Page 2 of 4
THERMAL RESISTANCE RATINGS
Note:
1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper.
2. Surface mounted on FR4 board using minimum pad size, 1oz copper
3. Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
4. Repetitive rating, pulse width limited by junction temperature TJ=150°C.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
V(BR)DSS
-20
-
-
V
VGS=0, ID= -250μA
Zero Gate Voltage Drain Current
IDSS
-
-
-1
μA
VDS= -16V, VGS=0
Gate-Source Leakage
IGSS
-
-
±5
μA
VDS=0 , VGS= ±5V
Gate-Threshold Voltage
VGS(TH)
-0.4
-0.65
-0.9
V
VDS=VGS, ID= -250μA
-
480
810
VGS= -4.5V, ID= -0.45A
-
620
1050
VGS= -2.5V, ID= -0.35A
Drain-Source On Resistance
RDS(ON)
-
780
1300
mΩ
VGS= -1.8V, ID= -0.25A
Forward Transconductance
gFS
-
1.25
-
S
VDS= -5V, ID= -0.45A
Body-Drain Diode Ratings
Diode Forward On–Voltage
VSD
-0.5
-0.65
-1.5
V
IS= -150mA, VGS=0
Dynamic Characteristics
Input Capacitance
CISS
-
74.5
-
Output Capacitance
COSS
-
10.8
-
Reverse Transfer Capacitance
CRSS
-
10.2
-
pF
VDS= -10V,
VGS=0,
f=100KHz
Total Gate Charge
QG(TOT)
-
1.8
-
Threshold Gate Charge
QG(TH)
-
0.12
-
Gate-to-Source Charge
QGS
-
0.18
-
Gate-to-Drain Charge
QGD
-
0.74
-
nC
VDS= -10V,
VGS= -4.5V,
ID= -0.45A
Turn-on Delay Time
Td(ON)
-
45
-
Rise Time
Tr
-
140
-
Turn-off Delay Time
Td(OFF)
-
1500
-
Fall Time
Tf
-
2100
-
nS
VDD= -10V,
I D= -0.45A,
VGS= -4.5V,
RG=6Ω.
Rating
Parameter
Symbol
Typ.
Max.
Unit
T≦10S
285
325
Junction-to-Ambient Thermal Resistance
1
Steady State
RθJA
355
440
T≦10S
395
460
Junction-to-Ambient Thermal Resistance
2
Steady State
RθJA
465
560
Junction-to-Case Thermal Resistance
Steady State
RθJC
280
320
°C / W


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