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IRF7750 Datasheet(PDF) 2 Page - International Rectifier |
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IRF7750 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 7 page  IRF7750 2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V trr Reverse Recovery Time ––– 26 39 ns TJ = 25°C, IF = -1.0A Qrr Reverse RecoveryCharge ––– 16 24 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics ––– ––– ––– ––– -38 -1.0 A When mounted on 1 inch square copper board, t<10 sec Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.012 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.030 VGS = -4.5V, ID = -4.7A ––– ––– 0.055 VGS = -2.5V, ID = -3.8A VGS(th) Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA gfs Forward Transconductance 11 ––– ––– S VDS = -10V, ID = -4.7A ––– ––– -1.0 VDS = -20V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 26 39 ID = -4.7A Qgs Gate-to-Source Charge ––– 3.9 5.8 nC VDS = -16V Qgd Gate-to-Drain ("Miller") Charge ––– 8.0 12 VGS = -5.0V td(on) Turn-On Delay Time ––– 15 ––– VDD = -10V tr Rise Time ––– 54 ––– ID = -1.0A td(off) Turn-Off Delay Time ––– 180 ––– RD = 10Ω tf Fall Time ––– 210 ––– RG = 24Ω Ciss Input Capacitance ––– 1700 ––– VGS = 0V Coss Output Capacitance ––– 380 ––– pF VDS = -15V Crss Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns S D G |
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