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IRF7751 Datasheet(PDF) 1 Page - International Rectifier

No. de pieza IRF7751
Descripción Electrónicos  Power MOSFET(Vdss=-30V)
Download  8 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF7751 Datasheet(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides the de-
signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
IRF7751
Description
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
TSSOP-8
Parameter
Max.
Units
VDS
Drain-Source Voltage
-30
V
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
-4.5
ID @ TC = 70°C
Continuous Drain Current, VGS @ -10V
-3.6
A
IDM
Pulsed Drain Current

-18
PD @TC = 25°C
Power Dissipation
ƒ
1.0
PD @TC = 70°C
Power Dissipation
ƒ
0.64
Linear Derating Factor
0.008
W/°C
VGS
Gate-to-Source Voltage
±20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
°C
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
125
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com
1
10/04/2000
PD - 94002
VDSS
RDS(on) max
ID
-30V
35m
Ω@VGS = -10V
-4.5A
55m
Ω@VGS = -4.5V
-3.8A
4 = G1
3 = S 1
2 = S 1
1 = D1
1
2
3
4
5
6
7
8
5 = G2
6 = S 2
7 = S 2
8 = D2


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