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IRF7754 Datasheet(PDF) 1 Page - International Rectifier

No. de pieza IRF7754
Descripción Electrónicos  Power MOSFET(Vdss=-12V)
Download  9 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF7754 Datasheet(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
05/14/01
IRF7754
Absolute Maximum Ratings
www.irf.com
1
Thermal Resistance
Parameter
Max.
Units
VDS
Drain-Source Voltage
-12
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-5.5
ID @ TA = 70°C
Continuous Drain Current, VGS @ -4.5V
-4.4
A
IDM
Pulsed Drain Current

-22
PD @TA = 25°C
Maximum Power Dissipation
ƒ
1W
PD @TA = 70°C
Maximum Power Dissipation
ƒ
0.64
W
Linear Derating Factor
0.01
W/°C
VGS
Gate-to-Source Voltage
±8
V
TJ , TSTG
Junction and Storage Temperature Range
-55 to +150
°C
PD - 94224
VDSS
RDS(on) max
ID
-12V
25m
Ω@VGS = -4.5V
-
5.4A
34m
Ω@VGS = -2.5V
-
4.6A
49m
Ω@VGS = -1.8V
-
3.9A
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
125
°C/W
TSSOP-8
Description
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
4 = G1
3 = S1
2 = S1
1 = D1
1
2
3
4
5
6
7
8
5 = G2
6 = S2
7 = S2
8 = D2


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