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IRF9130 Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRF9130
Descripción Electrónicos  TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.30ohm, Id=-11A)
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF9130 Datasheet(HTML) 2 Page - International Rectifier

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IRF9130
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction to Case
1.67
RthJA
Junction-to-Ambient
30
soldered to a 2” square copper-clad board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
-11
ISM
Pulse Source Current (Body Diode) ➀
-50
VSD
Diode Forward Voltage
-4.7
V
Tj = 25°C, IS =-11A, VGS = 0V ➃
trr
Reverse Recovery Time
250
nS
Tj = 25°C, IF =-11A, di/dt ≤-100A/µs
QRR
Reverse Recovery Charge
3.0
µc
VDD ≤-50V ➃
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-100
V
VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
-0.087
V/°C
Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.30
VGS =-10V, ID =-7.0A➃
Resistance
0.35
VGS =-10V, ID =-11A ➃
VGS(th)
Gate Threshold Voltage
-2.0
-4.0
V
VDS = VGS, ID =-250µA
gfs
Forward Transconductance
3
S ( )
VDS >-15V, IDS =-7.0A➃
IDSS
Zero Gate Voltage Drain Current
-25
VDS=-80V, VGS=0V
-250
VDS =-80V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
-100
VGS =-20V
IGSS
Gate-to-Source Leakage Reverse
1 0 0
VGS =-20V
Qg
Total Gate Charge
2 9
VGS =-10V, ID=-11A
Qgs
Gate-to-Source Charge
7.1
nC
VDS =-50V
Qgd
Gate-to-Drain (‘Miller’) Charge
2 1
td(on)
Turn-On Delay Time
6 0
VDD =-50V, ID =-11A,
t r
Rise Time
1 4 0
RG =7.5Ω
td(off)
Turn-Off Delay Time
140
tf
Fall Time
140
LS + LD
Total Inductance
6.1
Ciss
Input Capacitance
860
VGS = 0V, VDS =25V
Coss
Output Capacitance
350
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
125
nA
nH
ns
µA
Measured from the center of
drain pad to center of source
pad


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