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IRFB11N50 Datasheet(PDF) 1 Page - International Rectifier

No. de pieza IRFB11N50
Descripción Electrónicos  Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=11A)
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRFB11N50 Datasheet(HTML) 1 Page - International Rectifier

  IRFB11N50 Datasheet HTML 1Page - International Rectifier IRFB11N50 Datasheet HTML 2Page - International Rectifier IRFB11N50 Datasheet HTML 3Page - International Rectifier IRFB11N50 Datasheet HTML 4Page - International Rectifier IRFB11N50 Datasheet HTML 5Page - International Rectifier IRFB11N50 Datasheet HTML 6Page - International Rectifier IRFB11N50 Datasheet HTML 7Page - International Rectifier IRFB11N50 Datasheet HTML 8Page - International Rectifier  
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Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
11
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
7.0
A
IDM
Pulsed Drain Current

44
PD @TC = 25°C
Power Dissipation
170
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
ƒ
6.9
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw
10 lbf•in (1.1N•m)
3/30/99
PD- 91809B
TO-220AB
SMPS MOSFET
HEXFET® Power MOSFET
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
Benefits
Applications
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
VDSS
Rds(on) max
ID
500V
0.52
Ω
11A
Applicable Off Line SMPS Topologies:
l Two Transistor Forward
l Half & Full Bridge
IRFB11N50A
www.irf.com
1
GS
D
Notes
 through … are on page 8
l Power Factor Correction Boost
Absolute Maximum Ratings


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