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IRFB61N15D Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRFB61N15D
Descripción Electrónicos  Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRFB61N15D Datasheet(HTML) 2 Page - International Rectifier

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Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
22
–––
–––
S
VDS = 50V, ID = 37A
Qg
Total Gate Charge
–––
95
140
ID = 37A
Qgs
Gate-to-Source Charge
–––
26
39
nC
VDS = 120V
Qgd
Gate-to-Drain ("Miller") Charge
–––
45
68
VGS = 10V,
td(on)
Turn-On Delay Time
–––
18
–––
VDD = 75V
tr
Rise Time
–––
110
–––
ID = 37A
td(off)
Turn-Off Delay Time
–––
28
–––
RG = 1.8Ω
tf
Fall Time
–––
51
–––
VGS = 10V
„
Ciss
Input Capacitance
–––
3470 –––
VGS = 0V
Coss
Output Capacitance
–––
690
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
150
–––
pF
ƒ = 1.0MHz
Coss
Output Capacitance
–––
4600 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
310
–––
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
580
–––
VGS = 0V, VDS = 0V to 120V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
520
mJ
IAR
Avalanche Current

–––
37
A
EAR
Repetitive Avalanche Energy

–––
33
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 37A, VGS = 0V
„
trr
Reverse Recovery Time
–––
180
270
ns
TJ = 25°C, IF = 37A
Qrr
Reverse RecoveryCharge
––– 1340 2010
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
60
250
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
150
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.18 –––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.032
VGS = 10V, ID = 36A
„
VGS(th)
Gate Threshold Voltage
3.0
–––
5.5
V
VDS = VGS, ID = 250µA
–––
–––
25
µA
VDS = 150V, VGS = 0V
–––
–––
250
VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -30V
IGSS
IDSS
Drain-to-Source Leakage Current


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