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IRFBC30AS Datasheet(PDF) 4 Page - International Rectifier

No. de pieza IRFBC30AS
Descripción Electrónicos  Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRFBC30AS Datasheet(HTML) 4 Page - International Rectifier

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IRFBC30AS/L
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
4
8
12
16
20
24
0
4
8
12
16
20
Q , Total Gate Charge (nC)
G
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
3.6A
V
= 120V
DS
V
= 300V
DS
V
= 480V
DS
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
V
,Source-to-Drain Voltage (V)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
10
100
1000
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V
, Drain-to-Source Voltage (V)
DS
10us
100us
1ms
10ms
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds+ Cgd


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