N0400P-ZK-E1-AYNote datasheet(5/9 Pages) RENESAS

No. de pieza	N0400P-ZK-E1-AYNote

Descripción Electrónicos	MOS FIELD EFFECT TRANSISTOR

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N0400P

Chapter Title

R07DS0500EJ0200 Rev.2.00

Page 5 of 7

Aug 19, 2011

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

0

10

20

30

40

50

60

70

80

-75

-25

25

75

125

175

Pulsed

VGS =

−2.5 V

−4.5 V

Tch - Channel Temperature -

°C

10

100

1000

10000

-0.1

-1

-10

-100

VGS = 0 V

f = 1 MHz

Ciss

Coss

Crss

VDS - Drain to Source Voltage - V

SWITCHING CHARACTERISTICS

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

1

10

100

1000

-0.1

-1

-10

-100

tr

td(off)

td(on)

tf

VDD =

−20 V

VGS =

−4.5 V

RG = 0

Ω

ID - Drain Current - A

0

-5

-10

-15

-20

-25

-30

-35

-40

-45

0

5

10

15

20

0

-0.5

-1

-1.5

-2

-2.5

-3

-3.5

-4

-4.5

VDS

ID =

−15 A

VGS

VDD =

−32 V

−20 V

−8 V

QG - Gate Charge - nC

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT

-0.01

-0.1

-1

-10

-100

0

0.5

1

1.5

Pulsed

−4.5 V

VGS = 0 V

−2.5 V

VF(S-D) - Source to Drain Voltage - V

1

10

100

1000

-0.1

-1

-10

-100

VGS = 0 V

di/dt =

−100 A/μs

IF - Diode Forward Current - A

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