Motor de Búsqueda de Datasheet de Componentes Electrónicos
Selected language     Spanish  ▼

Delete All
ON OFF
ALLDATASHEET.ES

X  

Preview PDF Download HTML

IRFR1205 Datasheet(PDF) 1 Page - International Rectifier

No. de Pieza. IRFR1205
Descripción  Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A⑤)
Descarga  10 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricante  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRFR1205 Datasheet(HTML) 1 Page - International Rectifier

  IRFR1205 Hoja de datos HTML 1Page - International Rectifier IRFR1205 Hoja de datos HTML 2Page - International Rectifier IRFR1205 Hoja de datos HTML 3Page - International Rectifier IRFR1205 Hoja de datos HTML 4Page - International Rectifier IRFR1205 Hoja de datos HTML 5Page - International Rectifier IRFR1205 Hoja de datos HTML 6Page - International Rectifier IRFR1205 Hoja de datos HTML 7Page - International Rectifier IRFR1205 Hoja de datos HTML 8Page - International Rectifier IRFR1205 Hoja de datos HTML 9Page - International Rectifier Next Button
Zoom Inzoom in Zoom Outzoom out
 1 / 10 page
background image
IRFR/U1205
HEXFET® Power MOSFET
S
D
G
VDSS = 55V
RDS(on) = 0.027Ω
ID = 44A…
Description
5/11/98
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
44
…
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
31
…
A
IDM
Pulsed Drain Current
‡
160
PD @TC = 25°C
Power Dissipation
107
W
Linear Derating Factor
0.71
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚‡
210
mJ
IAR
Avalanche Current
‡
25
A
EAR
Repetitive Avalanche Energy
‡
11
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.4
RθJA
Junction-to-Ambient (PCB mount) **
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
Thermal Resistance
D -P A K
T O -252 A A
I-P A K
TO -25 1A A
l Ultra Low On-Resistance
l Surface Mount (IRFR1205)
l Straight Lead (IRFU1205)
l Fast Switching
l Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91318B
www.irf.com
1


Html Pages

1  2  3  4  5  6  7  8  9  10 


Datasheet Download

Go To PDF Page


Enlace URL




Privacy Policy
ALLDATASHEET.ES
Does ALLDATASHEET help your business so far?  [ DONATE ]  

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Favorito   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn