IRLML2803 datasheet(4/9 Pages) IRF

No. de pieza	IRLML2803

Descripción Electrónicos	Power MOSFET(Vdss=30V, Rds(on)=0.25ohm)

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Fabricante Electrónico	IRF [International Rectifier]

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IRLML2803

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

0

20

40

60

80

100

120

140

160

1

10

100

DS

V

, Drain-to-Source Voltage (V)

A

V

= 0V,

f = 1MHz

C

= C

+ C

, C

SHORTED

C

= C

C

= C

+ C

GS

iss

gs

gd

ds

rss

gd

oss

ds

gd

Ciss

Coss

Crss

0

4

8

12

16

20

0.0

1.0

2.0

3.0

4.0

5.0

Q , Total Gate Charge (nC)

G

A

FOR TEST CIRCUIT

SEE FIGURE 9

I

= 0.91A

V

= 24V

V

= 15V

D

DS

0.1

1

10

0.4

0.6

0.8

1.0

1.2

1.4

T = 25°C

T = 150°C

J

V

= 0V

GS

V

, Source-to-Drain Voltage (V)

SD

A

0.1

1

10

100

1

10

100

V

, Drain-to-Source Voltage (V)

DS

OPERATION IN THIS AREA LIMITED

BY RDS(on)

T

= 25°C

T

= 150°C

Single Pulse

1ms

10ms

A

J

100µs

10µs

Número de pieza similar - IRLML2803

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
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International Rectifier	IRLML2803GPBF	247Kb / 8P	HEXFET Power MOSFET
International Rectifier	IRLML2803GPBF	230Kb / 8P	Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET
VBsemi Electronics Co.,...	IRLML2803GTRPBF	1Mb / 9P	N-Channel 30-V (D-S) MOSFET

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Descripción similar - IRLML2803

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
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	SI4435DY	82Kb / 8P	Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm
	IRF7413A	116Kb / 9P	Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm)
	IRF5800	98Kb / 8P	Power MOSFET(Vdss=-30V, Rds(on)=0.085ohm)
	IRF7606	102Kb / 8P	Power MOSFET(Vdss=-30V, Rds(on)=0.09ohm)
	IRF9410	114Kb / 7P	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
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IRLML2803 Datasheet(PDF) 4 Page - International Rectifier

IRLML2803 Datasheet(HTML) 4 Page - International Rectifier

Número de pieza similar - IRLML2803

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