1

3

2

LMUN5311DW1T1G

Series

SOT-363/SC-88

6

4

5

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base–emitter resistor. These digital tran-

sistors are designed to replace a single device and its external resistor bias network. The BRT

eliminates these individual components by integrating them into a single device. In the

LMUN5311DW1T1G series, two complementary BRT devices are housed in the SOT–363 package

which is ideal for low power surface mount applications where board space is at a premium.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

Dual Bias Resistor Transistors

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

1

3

2

6

4

5

XX

MARKING DIAGRAM

13

2

6

4

5

DEVICE MARKING

INFORMATION

See specific marking information in

the device marking table on page 2 of

this data sheet.

xx = Device Marking

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

Rating

Symbol Value

Unit

Collector-Base Voltage

50

Vdc

Collector-Emitter Voltage

50

Vdc

Collector Current

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation

187 (Note 1.)

mW

Derate above 25°C

mW/°C

Thermal Resistance –

670 (Note 1.)

°C/W

Junction-to-Ambient

490 (Note 2.)

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation

Derate above 25°C

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

mW

mW/°C

Thermal Resistance –

Junction-to-Ambient

493 (Note 1.)

325 (Note 2.)

°C/W

Thermal Resistance –

Junction-to-Lead

188 (Note 1.)

208 (Note 2.)

°C/W

Junction and Storage

Temperature

–55 to +150

°C

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

LESHAN RADIO COMPANY, LTD.

1/29

• We declare that the material of product compliance with RoHS requirements.