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SD101BW-E3-18 Datasheet(PDF) 2 Page - Vishay Siliconix

No. de Pieza. SD101BW-E3-18
Descripción  Small Signal Schottky Diodes
Descarga  5 Pages
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Fabricante  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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SD101BW-E3-18 Datasheet(HTML) 2 Page - Vishay Siliconix

   
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SD101AW, SD101BW, SD101CW
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 25-Feb-13
2
Document Number: 85679
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
Fig. 2 - Typical Forward Conduction Curve
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
Fig. 4 - Typical Capacitance Curve as a Function of Reverse
Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Reverse breakdown voltage
IR = 10 μA
SD101AW
V(BR)
60
V
SD101BW
V(BR)
50
V
SD101CW
V(BR)
40
V
Leakage current
VR = 50 V
SD101AW
IR
200
nA
VR = 40 V
SD101BW
IR
200
nA
VR = 30 V
SD101CW
IR
200
nA
Forward voltage drop
IF = 1 mA
SD101AW
VF
410
mV
SD101BW
VF
400
mV
SD101CW
VF
390
mV
IF = 15 mA
SD101AW
VF
1000
mV
SD101BW
VF
950
mV
SD101CW
VF
900
mV
Diode capacitance
VR = 0 V, f = 1 MHz
SD101AW
CD
2pF
SD101BW
CD
2.1
pF
SD101CW
CD
2.2
pF
Reverse recovery time
IF = IR = 5 mA, recover to 0.1 IR
trr
1ns
0.01
0.1
1
10
0
0.4
0.6
0.8
1.0
0.2
A
B
C
VF - Forward Voltage (V)
18477
A
B
C
0
0.4
0.6
0.8
1.0
0.2
60
20
80
40
0
100
VF - Forward Voltage (V)
18478
100
10
1
0.1
0.01
10
20
30
40
050
75 °C
50 °C
25 °C
125 °C
100 °C
VR - Reverse Voltage (V)
18479
18480
10
20
30
40
0
0
1.0
1.2
1.4
1.6
1.8
2.0
0.6
0.8
0.2
0.4
50
Tj = 25 °C
C
B
A
VR - Reverse Voltage (V)


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