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BAS116 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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BAS116 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page - Low power loss, high current capability, low VF - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) under plate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Weight: 8 mg (approximately) - Marking Code: JV SYMBOL UNIT PD mW VRRM V IO mA IFSM mA RθJA °C/W TJ , TSTG °C SYMBOL UNIT VBR V CJ pF trr ns Notes : 1. Valid provided that electrodes are kept at ambient temperature Document Number: DS_S1412037 Version: D15 Thermal Resistance (Junction to Ambient) (Note 1) Non-Repetitive Peak Forward Surge Current @ t = 1.0 s Mean Forward Current Repetitive Peak Reverse Voltage Power Dissipation -55 to +150 330 500 200 75 - 2. Reverse recovery test conditions : IF=10mA , IR=10mA , RL=100 Ω, IRR= 1mA 3.0 Reverse Recovery Time (Note 2) -2.0 V 75 MIN Junction and Storage Temperature Range PARAMETER MAX - Reverse Breakdown Voltage IR = 100 μA 225 - -1.0 0.9 VF - -1.25 1.1 Junction Capacitance Forward Voltage IF = 150 mA IF = 50 mA IF = 10 mA IF = 1 mA VR = 0 V , f = 1.0 MHz Reverse Leakage Current PARAMETER VALUE SOT-23 MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) BAS116 Taiwan Semiconductor Small Signal Product 225mW, SMD Switching Diode FEATURES nA VR = 75 V TJ=25°C TJ=150°C IR - 80 5 |
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