BYG20D-M3/HM3, BYG20G-M3/HM3, BYG20J-M3/HM3

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Vishay General Semiconductor

Revision: 19-Feb-15

3

Document Number: 89473

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 1 - Forward Current vs. Forward Voltage

Fig. 2 - Max. Average Forward Current vs. Ambient Temperature

Fig. 3 - Reverse Current vs. Junction Temperature

Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature

Fig. 5 - Diode Capacitance vs. Reverse Voltage

Fig. 6 - Reverse Recovery Time vs. Forward Current

0.001

0.01

0.1

1

10

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Forward Voltage (V)

T

T

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

80

60

40

20

0

120

140

160

Ambient Temperature (°C)

V

Half Sine-Wave

1

10

100

25

50

75

100

125

150

Junction Temperature (°C)

V

P

at 100 % V

R

0

10

20

30

40

70

25

50

75

100

125

150

Junction Temperature (°C)

V

P

at 80 % V

R

50

60

0

5

10

15

20

25

30

0.1

1

10

100

f = 1 MHz

Reverse Voltage (V)

0

0.2

0.4

0.6

0.8

0

100

200

300

400

600

1.0

500

I

Forward Current (A)

T

T

T

T

T