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TSM1NB60 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM1NB60 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 7 page  TSM1NB60 Taiwan Semiconductor Document Number: DS_P0000038 2 Version: B15 ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static (Note 5) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 0.5A RDS(ON) -- 8 10 Ω Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.5 3.5 4.5 V Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 10 µA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transfer Conductance VDS = 10V, ID = 0.5A gfs -- 0.8 -- S Dynamic (Note 6) Total Gate Charge VDS = 480V, ID = 1A, VGS = 10V Qg -- 6.1 -- nC Gate-Source Charge Qgs -- 1.4 -- Gate-Drain Charge Qgd -- 3.3 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Ciss -- 138 -- pF Output Capacitance Coss -- 17.1 -- Reverse Transfer Capacitance Crss -- 4.2 -- Gate Resistance F = 1MHz, open drain Rg -- 12.5 -- Ω Switching (Note 7) Turn-On Delay Time VDD = 300V, RG =25Ω ID = 1A, VGS = 10V td(on) -- 7.7 -- ns Turn-On Rise Time tr -- 6.8 -- Turn-Off Delay Time td(off) -- 15.3 -- Turn-Off Fall Time tf -- 14.9 -- Source-Drain Diode (Note 5) Diode Forward Voltage IS = 1A, VGS = 0V VSD -- 0.9 1.4 V Source Current Integral reverse diode In the MOSFET IS -- -- 1 A Source Current (Pulse) ISM -- -- 4 Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. 3. L = 10mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25 oC. 4. ISD≤1A , VDD≤BVDSS , di/dt≤200A/us , Starting TJ = 25 oC. 5. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 6. For DESIGN AID ONLY, not subject to production testing. 7. Switching time is essentially independent of operating temperature. |
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