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TSM9N90ECZC0G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

No. de pieza TSM9N90ECZC0G
Descripción Electrónicos  900V, 9A, 1.4廓 N-Channel Power MOSFET
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Fabricante Electrónico  TSC [Taiwan Semiconductor Company, Ltd]
Página de inicio  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM9N90ECZC0G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TSM9N90E
900V, 9A, 1.4
Ω
N-Channel Power MOSFET
1/8
Version: A14
TO-220
ITO-220
Key Parameter Performance
Parameter
Value
Unit
VDS
900
V
RDS(on)(max)
1.4
Ω
Qg
72
nC
Features
100% Avalanche Tested
G-S ESD Protection Diode Embedded
Block Diagram
N-Channel MOSFET with ESD Protection
Ordering Information
Part No.
Package
Packing
TSM9N90ECZ C0G
TO-220
50pcs / Tube
TSM9N90ECI C0G
ITO-220
50pcs / Tube
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Absolute Maximum Ratings
Parameter
Symbol
TO-220
ITO-220
Unit
Drain-Source Voltage
VDS
900
V
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current
(Note 1)
TC = 25
oC
ID
9
9
A
TC = 100
oC
5.7
5.7
Pulsed Drain Current
(Note 2)
IDM
36
36
A
Repetitive Avalanche Current
(Note 1)
IAR
9
A
Repetitive Avalanche Energy
(Note 1)
EAR
29
mJ
Single Pulse Avalanche Energy
(Note 3)
EAS
454
mJ
Peak Diode Recovery
(Note 4)
dv/dt
4.5
V
Power Dissipation
TC = 25℃
PD
290
89
W
Derate above 25ºC
2.32
0.71
℃/W
Operating Junction Temperature
TJ
150
Storage Temperature Range
TSTG
-55 to +150
Thermal Performance
Parameter
Symbol
TO-220
ITO-220
Unit
Thermal Resistance - Junction to Case
RӨJC
0.43
1.4
℃/W
Thermal Resistance - Junction to Ambient
RӨJA
62.5
Pin Definition:
1. Gate
2. Drain
3. Source


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