SDF08N50 datasheet(3/11 Pages) SAMHOP

No. de pieza	SDF08N50

Descripción Electrónicos	Super high dense cell design for low RDS(ON).

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Fabricante Electrónico	SAMHOP [SamHop Microelectronics Corp.]

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Tj( C )

Ver 2.4

www.samhop.com.tw

Dec,24,2013

3

0.4

0.2

1.6

1.4

1.2

1.0

0.8

0.6

125 150

100

75

50

25

0

-25

-50

V DS =V GS

ID=250uA

1.10

1.05

1.00

0.95

0.90

0.85

1.15

125 150

100

75

50

25

0

-25

-50

ID=250uA

8.0

6.4

4.8

1.6

0

Tj=125 C

-55 C

25 C

2.4

2.0

1.6

1.2

0.8

0.4

1

V GS =10V

3.0

2.6

2.2

1.8

1.4

1.0

0

100

75

25

50

125

150

V GS =10V

ID=4A

VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

15

12

9

6

3

0

VGS =5V

VGS =10V

VGS =6V

ID, Drain Current(A)

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Tj, Junction Temperature(° C )

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Tj, Junction Temperature(° C )

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Breakdown Voltage Variation

with Temperature

36

9

12

15

0.0

1.2

7.2

6.0

4.8

3.6

2.4

0

5

10

15

20

25

30

VGS =7V

SDP08N50

SDF08N50

3.2

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SDF08N50 Datasheet(PDF) 3 Page - SamHop Microelectronics Corp.

SDF08N50 Datasheet(HTML) 3 Page - SamHop Microelectronics Corp.

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