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STE334S Datasheet(Hoja de datos) 2 Page - SamHop Microelectronics Corp.

No. de Pieza. STE334S
Descripción  Super high dense cell design for low RDS(ON).
Descarga  6 Pages
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Fabricante  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo 

   
 2 page
background image
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
IGSS
±100
nA
VGS(th)
V
3.8
gFS
S
CISS
900
pF
COSS
284
pF
CRSS
228
pF
Qg
30
nC
38
71
37
tD(ON)
26
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=15V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=15V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=9A
VDS=10V , ID=9A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=24V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=4.5V , ID=6.7A
4.7
6.3
8.3
m ohm
b
f=1.0MHz
b
STE334S
Ver 1.0
www.samhop.com.tw
Dec,06,2012
2
nC
Qgs
nC
Qgd
2.6
7.7
Gate-Drain Charge
Gate-Source Charge
VDS=15V,ID=9A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
nC
13
VDS=15V,ID=9A,VGS=10V
VDS=15V,ID=9A,VGS=4.5V
VSD
Diode Forward Voltage
VGS=0V,IS=3A
0.76
1.2
V
Notes
a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
b.Guaranteed by design, not subject to production testing.
_
_
1
1.7
3
30




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