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2N6300 Datasheet(PDF) 1 Page - Central Semiconductor Corp

No. de Pieza. 2N6300
Descripción  COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
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Fabricante  CENTRAL [Central Semiconductor Corp]
Página de inicio  http://www.centralsemi.com
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2N6300 Datasheet(HTML) 1 Page - Central Semiconductor Corp

   
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2N6298
2N6299
MAXIMUM RATINGS: (TC=25°C)
SYMBOL
2N6300
2N6301
UNITS
Collector-Base Voltage
VCBO
60
80
V
Collector-Emitter Voltage
VCEO
60
80
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
8.0
A
Peak Collector Current
ICM
16
A
Continuous Base Current
IB
120
mA
Power Dissipation
PD
75
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +200
°C
Thermal Resistance
ΘJC
2.33
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICEV
VCE=Rated VCEO, VBE=1.5V
0.5
mA
ICEV
VCE=Rated VCEO, VBE=1.5V, TC=150°C
5.0
mA
ICEO
VCE=½Rated VCEO
0.5
mA
IEBO
VEB=5.0V
2.0
mA
BVCEO
IC=100mA (2N6298, 2N6300)
60
V
BVCEO
IC=100mA (2N6299, 2N6301)
80
V
VCE(SAT)
IC=4.0A, IB=16mA
2.0
V
VCE(SAT)
IC=8.0A, IB=80mA
3.0
V
VBE(SAT)
IC=8.0A, IB=80mA
4.0
V
VBE(ON)
VCE=3.0V, IC=4.0A
2.8
V
hFE
VCE=3.0V, IC=4.0A
750
18K
hFE
VCE=3.0V, IC=8.0A
100
hfe
VCE=3.0V, IC=3.0A, f=1.0kHz
300
fT
VCE=3.0V, IC=3.0A, f=1.0MHz
4.0
MHz
Cob
VCB=10V, IE=0, f=100kHz (NPN types)
200
pF
Cob
VCB=10V, IE=0, f=100kHz (PNP types)
300
pF
2N6298 2N6299
PNP
2N6300 2N6301
NPN
COMPLEMENTARY SILICON
DARLINGTON POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6298 series
devices are complementary silicon Darlington power
transistors manufactured by the epitaxial base process
designed for high gain amplifier and medium speed
switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
R3 (2-September 2014)
www.centr a lsemi.com


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