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DMN30H4D0L-7 Datasheet(PDF) 2 Page - Diodes Incorporated

No. de pieza DMN30H4D0L-7
Descripción Electrónicos  N-CHANNEL ENHANCEMENT MODE MOSFET
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN30H4D0L-7 Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN30H4D0L
Document number: DS36313 Rev. 2 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMN30H4D0L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
300
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
0.25
0.20
A
Pulsed Drain Current (10μs pulse, duty cycle
≦1%)
IDM
2
A
Maximum Body Diode Continuous Current (Note 6)
IS
0.8
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation
(Note 5)
PD
0.31
W
(Note 6)
0.47
Thermal Resistance, Junction to Ambient
(Note 5)
RJA
377
°C/W
(Note 6)
255
Thermal Resistance, Junction to Case
(Note 6)
RJC
81
Operating and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
300
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
1.0
µA
VDS = 240V, VGS = 0V
Gate-Body Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
1
3
V
VDS = VGS, ID = 250 µA
Static Drain-Source On-Resistance
RDS(ON)
2.1
4
VGS = 10V, ID = 0.3A

2.1
4
VGS = 4.5V, ID = 0.2A

3.8
6
VGS = 2.7V, ID = 0.1A
Diode Forward Voltage
VSD
0.7
1.2
V
VGS = 0V, IS = 0.3A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
187.3
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
11.7
Reverse Transfer Capacitance
Crss
8.7
Total Gate Charge
Qg
7.6
nC
VDS = 192V, VGS = 10V,
ID = 0.5A
Gate-Source Charge
Qgs
0.5
Gate-Drain Charge
Qgd
3.3
Turn-On Delay Time
tD(on)
4.9
nS
VDS = 60V, RL =200Ω
VGS = 10V, RG = 25Ω
Turn-On Rise Time
tr
4.7
Turn-Off Delay Time
tD(off)

25.8

Turn-Off Fall Time
tf

17.5

Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.


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