13.10.2011

SMB1W-850

1 of 5

SMB1W-850

TECHNICAL DATA

High Power LED, SMD

AlGaAs

SMB1W-850 are AlGaAs High Power LEDs mounted on a cooper heat sink with a 5x5 mm SMD

package and molded with epoxy resin. On forward bias, it emits a radiation of typical 430 mW at a

peak wavelength of 850 nm.

Specifications

• Structure: AlGaAs, 1W high power chip

• Peak Wavelength: typ. 850 nm

• Optical Output Power: typ. 430 mW

• Package

SMD, PPA resin

Lead frame die: silver plated on copper

Lens: epoxy resin

Item

Symbol

Value

Unit

Power Dissipation

2500

mW

Forward Current

1000

mA

Pulse Forward Current *

1

4000

mA

Reverse Voltage

5

V

Thermal Resistance

10

K/W

Operating Temperature

-30 … +85

°C

Storage Temperature

-30 … +100

°C

Soldering Temperature *

2

255

°C

*

*

(Unit: mm)

Electro-Optical Characteristics

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Forward Voltage

-

2.1

2.5

V

Pulsed Forward Current

-

4.2

5.5

V

280

430

-

Total Radiated Power

-

1700

-

mW

-

200

-

Radiant Intensity

-

800

-

mW/sr

Peak Wavelength

λ

P

-

850

-

nm

Half Width

Δλ

-

45

-

nm

Viewing Half Angle

Θ

1/2

-

±66

-

deg.

Rise Time

-

15

-

ns

Fall Time

-

10

-

ns

Total Radiated Power is measured by S3584-08

Radiant Intensity is measured by Tektronix J-6512

Notes: Do not view directly into the emitting area of the LED during operation!

The above specifications are for reference purpose only and subjected to change without prior notice.