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DMP3018SFK_15 Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP3018SFK_15
Descripción  P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  6 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP3018SFK
Document number: DS37604 Rev. 2 - 2
2 of 6
www.diodes.com
January 2015
© Diodes Incorporated
DMP3018SFK
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-10.2
-8.1
A
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
-7.7
-6.1
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
-3
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
-80
A
Avalanche Current (Note 7)
IAS
-14
A
Avalanche Energy (Note 7)
EAS
104
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
PD
1
W
Thermal Resistance, Junction to Ambient (Note 5)
RJA
123
°C/W
Total Power Dissipation (Note 6)
PD
2.2
W
Thermal Resistance, Junction to Ambient (Note 6)
RJA
55
°C/W
Total Power Dissipation (Note 6)
TC = +25°C
PD
17
W
Thermal Resistance, Junction to Case (Note 6)
RJC
7.2
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-30
V
VGS = 0V, ID = -10mA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
-1
µA
VDS = -24V, VGS = 0V
Zero Gate Voltage Drain Current TJ = +150°C (Note 9)
-100
Gate-Source Leakage
IGSS
±10
µA
VGS = ±25V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
-1
-1.6
-3
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS(ON)
9.5
14.5
mΩ
VGS = -10V, ID = -9.5A
15
25.5
VGS = -4.5V, ID = -6.9A
Diode Forward Voltage
VSD
-0.7
-1.2
V
VGS = 0V, IS = -1A
On State Drain Current (Note 9)
ID(ON)
-20
A
VDS ≦-5V, VGS = -10V
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
2,207
4,414
pF
VDS = -15V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
390
780
Reverse Transfer Capacitance
Crss
343
686
Gate Resistance
Rg
8.4
20
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -10V)
Qg
42.7
90
nC
VDS = -15V, ID = -9.5A
Total Gate Charge (VGS = -4.5V)
Qg
21.6
45
Gate-Source Charge
Qgs
7.9
16
Gate-Drain Charge
Qgd
10
20
Turn-On Delay Time
tD(on)
7.35
15
ns
VDD = -15V, VGS = -10V,
RGEN = 6Ω, ID = -9.5A
Turn-On Rise Time
tr
16.4
30
Turn-Off Delay Time
tD(off)
67.2
110
Turn-Off Fall Time
tf
37.5
60
Reverse Recovery Time
trr
18.6
35
ns
IS = -9.5A, di/dt = 100A/μs
Reverse Recovery Charge
Qrr
8.6
17.5
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7. UIS in production with L = 1mH, TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.




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