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DMP3085LSD_15 Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP3085LSD_15
Descripción  P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  6 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP3085LSD
Document number: DS36194 Rev. 1 - 0
2 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMP3085LSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-3.9
-3.1
A
t<10s
TA = +25°C
TA = +70°C
ID
-4.9
-3.9
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
-2.5
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
20
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
TA = +25°C
PD
1.1
W
TA = +70°C
0.7
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
107
°C/W
t<10s
70
Total Power Dissipation (Note 6)
TA = +25°C
PD
1.7
W
TA = +70°C
1.1
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
75
°C/W
t<10s
50
Thermal Resistance, Junction to Case
RθJC
14.5
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-30
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS =-30V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
-1
-3
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS (ON)
50
70
mΩ
VGS = -10V, ID = -5.3A
75
95
VGS = -4.5V, ID = -4.2A
Forward Transfer Admittance
|Yfs|
5.8
S
VDS = -5V, ID = -5.3A
Diode Forward Voltage
VSD
-0.7
-1.2
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
563
pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
48
Reverse Transfer Capacitance
Crss
41
Gate Resistance
RG
10.3
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V)
Qg
5.2
nC
VDS = -15V, ID = -3.8A
Total Gate Charge (VGS = -10V)
Qg
11
Gate-Source Charge
Qgs
1.7
Gate-Drain Charge
Qgd
1.9
Turn-On Delay Time
tD(on)
4.8
nS
VDS = -15V, VGS = -10V,
ID = -1A, RG = 6.0Ω
Turn-On Rise Time
tr
5
Turn-Off Delay Time
tD(off)
31
Turn-Off Fall Time
tf
14.6
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.




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