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DMP3068L-13 Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP3068L-13
Descripción  30V P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  6 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP3068L
Document number: DS37536 Rev. 2 - 2
2 of 6
www.diodes.com
January 2015
© Diodes Incorporated
DMP3068L
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±
12
V
Drain Current (Note 6) Vgs= -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-3.3
-2.6
A
t<10s
TA = +25°C
TA = +70°C
ID
-3.9
-3.2
A
Pulsed Drain Current (Pulse width ≤10µS, Duty Cycle ≤1%)
IDM
-18
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
0.7
W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
182
°C/W
t<10s
133
Total Power Dissipation (Note 6)
PD
1.2
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
103
°C/W
t<10s
75
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-30
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS = -30V, VGS = 0V
Gate-Source Leakage
IGSS
±
100
nA
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
-0.5
-1.3
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS (ON)
57
64
80
107
72
85
120
165
m
VGS = -10V, ID = -4.2A
VGS = -4.5V, ID = -4.0A
VGS = -2.5V, ID = -2.0A
VGS = -1.8V, ID = -1.0A
Diode Forward Voltage
VSD
-1.2
V
VGS = 0V, IS = -1.0A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
708
pF
VDS = -15V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
57
pF
Reverse Transfer Capacitance
Crss
47
pF
Gate Resistance
RG
14
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V)
QG
7.3
nC
VDS = -15V, ID = -4A
Total Gate Charge (VGS = -10V)
QG
15.9
nC
VDS = -15V, ID = -4A
Gate-Source Charge
QGS
1.2
Gate-Drain Charge
QGD
1.7
Turn-On Delay Time
td(on)
3.5
ns
VDS = -15V, VGS = -10V,
ID = -4A, RG = 6.0
Rise Time
tr
15.8
Turn-Off Delay Time
td(off)
70.3
Fall Time
tf
33.9
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1in. square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.




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