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DMP4013LFG-7 Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP4013LFG-7
Descripción  40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Descarga  7 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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POWERDI is a registered trademark of Diodes Incorporated.
DMP4013LFG
Document number: DS37205 Rev. 2 - 2
2 of 7
www.diodes.com
January 2015
© Diodes Incorporated
DMP4013LFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-40
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-10.3
-8.3
A
t<10s
TA = +25°C
TA = +70°C
ID
-13.7
-11
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
80
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
2.6
A
Avalanche Current, L = 0.1mH
IAS
34
A
Avalanche Energy, L = 0.1mH
EAS
58
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
PD
1
W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
123
°C/W
t<10s
69
Total Power Dissipation (Note 6)
PD
2.1
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
60
°C/W
t<10s
34
Thermal Resistance, Junction to Case (Note 6)
RθJC
3.3
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-40
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
-1
µA
VDS = -40V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
-1
-3
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS (ON)
13
mΩ
VGS = -10V, ID = -10A
18
VGS = -4.5V, ID = -8A
Diode Forward Voltage
VSD
-0.7
-1.2
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
3426
pF
VDS = -20V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
283
pF
Reverse Transfer Capacitance
Crss
235
pF
Gate Resistance
Rg
4.7
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V)
Qg
32.5
nC
VDS = -20V, ID = -10A
Total Gate Charge (VGS = -10V)
Qg
68.6
nC
Gate-Source Charge
Qgs
8.2
nC
Gate-Drain Charge
Qgd
9.9
nC
Turn-On Delay Time
tD(on)
5.3
ns
VDD = -20V, VGEN = -10V,
RG = 3Ω, ID = -10A
Turn-On Rise Time
tr
20
ns
Turn-Off Delay Time
tD(off)
126
ns
Turn-Off Fall Time
tf
83
ns
Body Diode Reverse Recovery Time
trr
19.5
nS
IF = -10A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
9.8
nC
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.




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