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DMP4015SPS-13 Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP4015SPS-13
Descripción  40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Descarga  6 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP4015SPS
Document number: DS35518 Rev. 9 - 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMP4015SPS
POWERDI is a registered trademark of Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-40
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-8.5
-6.8
A
t<10s
TA = +25°C
TA = +70°C
ID
-13.0
-10.5
A
Continuous Drain Current (Note 7) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-11.0
-8.7
A
t<10s
TA = +25°C
TA = +70°C
ID
-17.0
-13.5
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
IDM
-100
A
Maximum Body Diode Continuous Current (Note 7)
IS
-3.5
A
Avalanche Current (Note 8)
IAS
-22
A
Avalanche Energy (Note 8)
EAS
242
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
TA = +25°C
PD
1.3
W
TA = +70°C
0.8
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
RθJA
96.4
°C/W
t<10s
40.6
°C/W
Total Power Dissipation (Note 7)
TA = +25°C
PD
2.1
W
TA = +70°C
1.4
Thermal Resistance, Junction to Ambient (Note 7)
Steady state
RθJA
55.0
°C/W
t<10s
24.0
°C/W
Thermal Resistance, Junction to Case (Note 7)
RθJC
4.15
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BVDSS
-40
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
IDSS


-1
µA
VDS = -40V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 25V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
VGS(th)
-1.5
-2.0
-2.5
V
VDS = VGS, ID = -250A
Static Drain-Source On-Resistance
RDS (ON)
7
11
mΩ
VGS = -10V, ID = -9.8A
9
15
VGS = -4.5V, ID = -9.8A
Forward Transfer Admittance
|Yfs|
26
S
VDS = -20V, ID = -9.8A
Diode Forward Voltage
VSD
-0.7
-1.0
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Ciss
4234
pF
VDS = -20V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
1036
Reverse Transfer Capacitance
Crss
526
Gate Resistance
RG

7.77

VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge
Qg
47.5
nC
VDS = -20V, VGS = -5V
ID = -9.8A
Gate-Source Charge
Qgs
14.2
Gate-Drain Charge
Qgd
13.5
Turn-On Delay Time
tD(on)
13.2
ns
VGS = -10V, VDD = -20V, RG = 6Ω,
ID = -1A, RL = 20Ω
Turn-On Rise Time
tr
10.0
Turn-Off Delay Time
tD(off)
302.7
Turn-Off Fall Time
tf

137.9

Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
8. UIS in production with L = 0.1mH, TJ = +25°C
9 .Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.




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