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DMP4047LFDE-13 Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP4047LFDE-13
Descripción  40V P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  6 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP4047LFDE
Datasheet number: DS35777 Rev. 5 - 2
2 of 6
www.diodes.com
July 2012
© Diodes Incorporated
DMP4047LFDE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-40
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
-3.3
-2.6
A
t<5s
TA = +25°C
TA = +70°C
ID
-5.3
-4.2
A
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
-6.0
-4.8
A
t<5s
TA = +25°C
TA = +70°C
ID
-9.5
-7.6
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
-40
A
Maximum Body Diode Continuous Current
IS
3
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
TA = +25°C
PD
0.7
W
TA = +70°C
0.42
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
RθJA
180
°C/W
t<5s
76
Total Power Dissipation (Note 6)
TA = +25°C
PD
2.1
W
TA = +70°C
1.3
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
RθJA
58
°C/W
t<5s
25
Thermal Resistance, Junction to Case (Note 6)
RθJC
10.2
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-40
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
1
µA
VDS = -40V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
-1.0
-2.2
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
26
33
m
Ω
VGS = -10V, ID = -4.4A
36
50
VGS = -4.5V, ID = -3.7A
Forward Transfer Admittance
|Yfs|
5.2
S
VDS = -15V, ID = -4.4A
Diode Forward Voltage
VSD
0.75
1.2
V
VGS = 0V, IS = -3.9A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
1382
pF
VDS = -20V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
103
pF
Reverse Transfer Capacitance
Crss
81
pF
Gate Resistance
Rg
7.7
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V)
Qg
11.2
nC
VDS = -20V, ID = -4.9A
Total Gate Charge (VGS = -10V)
Qg
23.2
nC
Gate-Source Charge
Qgs
3.3
nC
Gate-Drain Charge
Qgd
3.9
nC
Turn-On Delay Time
tD(on)
18.4
ns
VDS = -20V, ID = -3.9A
VGS = 4.5V, RG = 1Ω
Turn-On Rise Time
tr
28.2
ns
Turn-Off Delay Time
tD(off)
38.8
ns
Turn-Off Fall Time
tf
28.6
ns
Reverse Recovery Time
trr
15.4
ns
IF = -3.9A, di/dt = 100A/μs
Reverse Recovery Charge
Qrr
5.4
nC
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing




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