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DMP4047SSD_15 Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP4047SSD_15
Descripción  40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  5 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP4047SSD
Document Number DS36353 Rev. 3 - 2
2 of 5
www.diodes.com
September 2013
© Diodes Incorporated
DMP4047SSD
Maximum Ratings (@T
A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-40
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 7) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-5.1
-4.1
A
t < 10s
TA = +25°C
TA = +70°C
ID
-6.5
-5.2
A
Continuous Drain Current (Note 7) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
-4.6
-3.7
A
t < 10s
TA = +25°C
TA = +70°C
ID
-5.9
-4.7
A
Maximum Body Diode Continuous Current
IS
-2.5
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
-40
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
TA = +25°C
PD
1.3
W
TA = +70°C
0.8
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
RθJA
98
°C/W
t < 10s
59
Total Power Dissipation (Note 7)
TA = +25°C
PD
1.8
W
TA = +70°C
1.1
Thermal Resistance, Junction to Ambient (Note 7)
Steady state
RθJA
71
°C/W
t < 10s
43
Thermal Resistance, Junction to Case (Note 7)
RθJC
11.8
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@T
A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-40
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
-1
µA
VDS = -40V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
-1.0
-3.0
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS (ON)
33
45
mΩ
VGS = -10V, ID = -4.4A
40
55
VGS = -4.5V, ID = -3.7A
Diode Forward Voltage
VSD
-0.75
-1.2
V
VGS = 0V, IS = -3.9A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
1154
pF
VDS = -20V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
84
pF
Reverse Transfer Capacitance
Crss
66
pF
Gate Resistance
RG
12.6
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V)
Qg
10.6
nC
VDS = -20V, ID = -4.9A
Total Gate Charge (VGS = -10V)
Qg
21.5
nC
Gate-Source Charge
Qgs
2.2
nC
Gate-Drain Charge
Qgd
3.3
nC
Turn-On Delay Time
tD(on)
8.7
ns
VDS = -20V, ID = -3.9A
VGS = 4.5V, RG = 1Ω
Turn-On Rise Time
tr
19.6
ns
Turn-Off Delay Time
tD(off)
34.9
ns
Turn-Off Fall Time
tf
25.5
ns
Body Diode Reverse Recovery Time
trr
9.61
ns
IF = -3.9A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
3.3
nC
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.




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