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DMP6180SK3_15 Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP6180SK3_15
Descripción  60V P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  6 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP6180SK3
Document number: DS36172 Rev. 3 - 2
2 of 6
www.diodes.com
July 2013
© Diodes Incorporated
DMP6180SK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
TC = +25°C
TC = +100°C
ID
-14
-10
A
Maximum Body Diode Forward Current (Note 6)
IS
4.1
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
25
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
TA = +25°C
PD
1.7
W
TA = +70°C
1.0
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
RJA
76
°C/W
t<10s
33
Total Power Dissipation (Note 6)
TA = +25°C
PD
2.7
W
TA = +70°C
1.5
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
RJA
50
°C/W
t<10s
24
Total Power Dissipation (Note 6)
TC = +25°C
PD
40
W
TC = +100°C
16
Thermal Resistance, Junction to Case (Note 6)
Steady state
RJC
3.1
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-60
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS = -48V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
-1.2
-2.7
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS (ON)
60
110
m
VGS = -10V, ID = -12A
80
140
VGS = -4.5V, ID =-8A
Forward Transfer Admittance
|Yfs|

15
S
VDS = -5V, ID = -12A
Diode Forward Voltage
VSD
-0.7
-1.0
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
984.7
pF
VDS = -30V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
58
Reverse Transfer Capacitance
Crss
45.5
Gate Resistance
RG

12.9

VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V)
Qg
8.1
nC
VDS = -30V, ID = -12A
Total Gate Charge (VGS = -10V)
Qg

17.1

Gate-Source Charge
Qgs
3.2
Gate-Drain Charge
Qgd
3.9
Turn-On Delay Time
tD(on)
5.9
ns
VGS = -10V, VDS = -30V, RGEN = 3Ω,
RL = 2.5Ω
Turn-On Rise Time
tr
21.2
Turn-Off Delay Time
tD(off)
30.9
Turn-Off Fall Time
tf

39.1

Body Diode Reverse Recovery Time
trr
19.9
ns
IS = -12A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr

1.7

nC
IS = -12A, dI/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing




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