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DMP6250SE_15 Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP6250SE_15
Descripción  60V P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  6 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP6250SE
Document Number DS36696 Rev. 1 - 2
2 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMP6250SE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source voltage
VDSS
-60
V
Gate-Source voltage (Note 5)
VGS
±20
V
Continuous Drain current (Note 6) VGS = -10V
TA = +25°C
TA = +70°C
ID
-2.1
-1.7
A
TC = +25°C
TC = +70°C
ID
-6.1
-4.9
A
Maximum Body Diode Continuous Current
IS
-1.8
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
-11
A
Single Pulsed Avalanche Current (Note 7) L = 0.1mH
IAS
-12
A
Single Pulsed Avalanche Energy (Note 7) L = 0.1mH
EAS
8
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
TA = +25°C
PD
1.8
W
TA = +70°C
1.1
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
69
°C/W
Total Power Dissipation (Note 6)
TC = +25°C
PD
14
W
Thermal Resistance, Junction to Case (Note 6)
RθJC
8.7
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-60
V
ID = -250µA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS = -60V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
-1
-3
V
VDS= VGS , ID = -250µA
Static Drain-Source On-Resistance
RDS (ON)
250
mΩ
VGS = -10V, ID = -1.0A
300
VGS = -4.5V, ID = -0.5A
Diode Forward Voltage
VSD
-1.2
V
VGS = 0V, IS = -2.0A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
551
pF
VDS = -30V, VGS = 0V
f= 1MHz
Output Capacitance
Coss
25.7
pF
Reverse Transfer Capacitance
Crss
19.1
pF
Gate Resistance
Rg
12.1
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V)
Qg
4.8
nC
VDS = -30V, ID = -2A
Total Gate Charge (VGS = -10V)
Qg
9.7
nC
Gate-Source Charge
Qgs
1.5
nC
Gate-Drain Charge
Qgd
1.6
nC
Turn-On Delay Time
tD(on)
6.3
ns
VDS = -30V, VGS = -10V,
RG = 50Ω, ID = -1A
Turn-On Rise Time
tr
10.3
ns
Turn-Off Delay Time
tD(off)
91.4
ns
Turn-Off Fall Time
tf
39.8
ns
Reverse recovery time
trr
9.2
ns
IS = -1A, di/dt= 100A/µs
Reverse recovery charge
Qrr
3.9
nC
Notes:
5. AEC-Q101 VGS maximum is ±16V.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. For design aid only, not subject to production testing.




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