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DMP4050SSDQ-13 Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP4050SSDQ-13
Descripción  40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  8 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP4050SSD
Document Number DS32107 Rev 3 - 2
2 of 8
www.diodes.com
April 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP4050SSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-40
V
Gate-Source Voltage
(Note 5)
VGS
20
V
Continuous Drain Current
VGS = 10V
(Notes 9 & 11)
ID
-5.2
A
TA = +70°C (Notes 7 & 9)
-4.2
(Notes 6 & 9)
-4.0
Pulsed Drain Current
VGS = 10V
(Notes 8 & 9)
IDM
-20.0
A
Continuous Source Current (Body Diode)
(Notes 7 & 9)
IS
-3.2
A
Pulsed Source Current (Body Diode)
(Notes 8 & 9)
ISM
-20.0
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power dissipation
Linear derating factor
(Notes 6 & 9)
PD
1.25
10.0
W
mW/°C
(Notes 6 & 10)
1.8
14.3
(Notes 7 & 9)
2.14
17.2
Thermal Resistance, Junction to Ambient
(Notes 6 & 9)
RθJA
100
°C/W
(Notes 6 & 10)
70
(Notes 7 & 9)
58
Thermal Resistance, Junction to Lead
(Notes 9 & 11)
RJL
53
Operating and storage temperature range
TJ, TSTG
-55 to +150
°C
Notes:
5. AEC-Q101 VGS maximum is 16V.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (3), except the device is measured at t
 10 sec.
8. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point (at the end of the drain lead).




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