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CS220-12D Datasheet(PDF) 1 Page - Central Semiconductor Corp

No. de pieza CS220-12D
Descripción Electrónicos  SILICON CONTROLLED RECTIFIERS
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Fabricante Electrónico  CENTRAL [Central Semiconductor Corp]
Página de inicio  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

CS220-12D Datasheet(HTML) 1 Page - Central Semiconductor Corp

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CS220-12B
CS220-12D
CS220-12M
CS220-12N
CS220-12P
SILICON CONTROLLED RECTIFIERS
12 AMP, 200 THRU 1000 VOLT
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS220-12B series
types are epoxy molded SCRs designed for sensing
circuit and control system applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
CS220
SYMBOL
-12B
-12D
-12M
-12N
-12P
UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM
200
400
600
800
1000
V
RMS On-State Current (TC=90°C)
IT(RMS)
12
A
Peak One Cycle Surge Current, t=10ms
ITSM
80
A
I2t Value for Fusing, t=10ms
I2t
32
A2s
Peak Gate Power Dissipation, tp=10μs
PGM
40
W
Average Gate Power Dissipation
PG(AV)
1.0
W
Peak Forward Gate Current, tp=10μs
IFGM
4.0
A
Peak Forward Gate Voltage, tp=10μs
VFGM
16
V
Peak Reverse Gate Voltage, tp=10μs
VRGM
5.0
V
Critical Rate of Rise of On-State Current
di/dt
100
A/μs
Operating Junction Temperature
TJ
-40 to +125
°C
Storage Temperature
Tstg
-40 to +150
°C
Thermal Resistance
ΘJA
60
°C/W
Thermal Resistance
ΘJC
2.5
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM Rated VDRM, VRRM
10
μA
IDRM, IRRM Rated VDRM, VRRM, TC=125°C
3.0
mA
IGT
VD=12V, RL=10Ω
3.5
15
mA
IH
IT=100mA
8.7
20
mA
VGT
VD=12V, RL=10Ω
0.64
1.5
V
VTM
ITM=24A, tp=380μs
1.21
1.6
V
dv/dt
VD=⅔Rated VDRM, TC=125°C
200
V/μs
TO-220 CASE
R6 (5-September 2014)
www.centr a lsemi.com


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