2SK2974

MITSUBISHI RF POWER MOS FET

Nov. ´97

OUTLINE DRAWING

Dimensions in mm

1 : DRAIN

2 : SOURCE

3 : GATE

MARKING

2

3

3.50

1

t=1.2MAX

(BOTTOM)

(TOP)

4.9

INDEX MARK

2.0

DESCRIPTION

2SK2974 is a MOS FET type transistor specifically designed for

VHF/UHF power amplifiers applications.

FEATURES

• High power gain:Gpe

≥8.4dB

• High efficiency:55% typ.

• Source case type seramic package

(connected internally to source)

APPLICATION

For drive stage and output stage of power amplifiers in VHF/UHF

band portable radio sets.

Typ

Max

Min

Limits

Parameter

Test conditions

Symbol

Parameter

Ratings

175

Unit

Drain to source voltage

Gate to source voltage

Channel dissipation

Junction temperature

Storage temperature

17

±10

10

-40 to +110

V

V

W

˚C

Symbol

Unit

Threshold voltage

Note: Above parameters,ratings,limits and conditions are subject to change.

55

10

1

1.7

µA

µA

V

%

1.0

Note1: Above parameters are guaranteed independently.

7

50

8

95

90

pF

pF

W

Conditions

Tc=25˚C

(Note2)

˚C

2: Solder source pad on Copper Block(14

×2.8×2mm)

TYPE No.

LOT No.

INDEX

MARK