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IRF3717PBF-1_15 Datasheet(Hoja de datos) 2 Page - International Rectifier

No. de Pieza. IRF3717PBF-1_15
Descripción  Synchronous MOSFET for Notebook Processor Power
Descarga  10 Pages
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Fabricante  IRF [International Rectifier]
Página de inicio  http://www.irf.com
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IRF3717PbF-1
2
www.irf.com © 2014 International Rectifier
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July 25, 2014
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.014
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.7
4.4
m
Ω
–––
4.8
5.7
VGS(th)
Gate Threshold Voltage
1.55
2.0
2.45
V
ΔVGS(th)/ΔTJ
Gate Threshold Voltage Coefficient
–––
-5.4
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
μA
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
57
–––
–––
S
Qg
Total Gate Charge
–––
22
33
Qgs1
Pre-Vth Gate-to-Source Charge
–––
6.8
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
2.2
–––
nC
Qgd
Gate-to-Drain Charge
–––
7.3
–––
Qgodr
Gate Charge Overdrive
–––
5.7
–––
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
–––
9.5
–––
Qoss
Output Charge
–––
12
–––
nC
td(on)
Turn-On Delay Time
–––
12
–––
tr
Rise Time
–––14–––
td(off)
Turn-Off Delay Time
–––
15
–––
ns
tf
Fall Time
–––
6.0
–––
Ciss
Input Capacitance
–––
2890
–––
Coss
Output Capacitance
–––
930
–––
pF
Crss
Reverse Transfer Capacitance
–––
430
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
™
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
20
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
160
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
22
32
ns
Qrr
Reverse Recovery Charge
–––
13
19
nC
Conditions
Max.
32
16
ƒ = 1.0MHz
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 20A e
MOSFET symbol
VDS = 10V, VGS = 0V
VDD = 10V, VGS = 4.5V
ID = 16A
VDS = 10V
VGS = 20V
VGS = -20V
VDS = 16V, VGS = 0V
TJ = 25°C, IF = 16A, VDD = 10V
di/dt = 100A/μs
e
TJ = 25°C, IS = 16A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
VGS = 4.5V, ID = 16A
e
VGS = 4.5V
Typ.
–––
VDS = VGS, ID = 250μA
Clamped Inductive Load
VDS = 10V, ID = 16A
VDS = 16V, VGS = 0V, TJ = 125°C
–––
ID = 16A
VGS = 0V
VDS = 10V




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