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IRF4905PBF_15 Datasheet(Hoja de datos) 1 Page - International Rectifier

No. de Pieza. IRF4905PBF_15
Descripción  Advanced Process Technology
Descarga  9 Pages
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Fabricante  IRF [International Rectifier]
Página de inicio  http://www.irf.com
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IRF4905PbF
HEXFET® Power MOSFET
PD - 94816
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
-74
ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V
-52
A
IDM
Pulsed Drain Current
-260
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
930
mJ
IAR
Avalanche Current
-38
A
EAR
Repetitive Avalanche Energy
20
mJ
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Thermal Resistance
VDSS = -55V
RDS(on) = 0.02Ω
ID = -74A
TO-220AB
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free
Description
11/6/03
S
D
G




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