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IRF4905SPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF4905SPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 12 page  8/5/05 www.irf.com 1 PD - 97034 HEXFET® Power MOSFET Features of this design are a 150°C junction oper- ating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. Description Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Features IRF4905SPbF IRF4905LPbF VDSS = -55V RDS(on) = 20mΩ ID = -42A D2Pak IRF4905SPbF TO-262 IRF4905LPbF S D G D S D G D GD S Gate Drain Source S D G Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energyd mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw i Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 0.75 RθJA Junction-to-Ambient (PCB Mount, steady state) ij ––– 40 -55 to + 150 300 (1.6mm from case ) 10 lbf yin (1.1Nym) 170 1.3 ± 20 Max. -70 -44 -280 -42 790 140 See Fig.12a, 12b, 15, 16 |
Número de pieza similar - IRF4905SPBF_15 |
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Descripción similar - IRF4905SPBF_15 |
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