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IRF7240PBF Datasheet(PDF) 1 Page - International Rectifier

No. de pieza IRF7240PBF
Descripción Electrónicos  Ultra Low On-Resistance
Download  9 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF7240PBF Datasheet(HTML) 1 Page - International Rectifier

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06/06/05
www.irf.com
1
IRF7240PbF
HEXFET® Power MOSFET
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area.
This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering technique
s.
Description
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
PD- 95253
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
50
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
VDSS
RDS(on) max
ID
-40V
0.015@VGS = -10V
-10.5A
0.025@VGS = -4.5V
-8.4A
SO-8
Parameter
Max.
Units
VDS
Drain- Source Voltage
-40
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-10.5
ID @ TA= 70°C
Continuous Drain Current, VGS @ -10V
-8.6
A
IDM
Pulsed Drain Current

-43
PD @TA = 25°C
Power Dissipation
ƒ
2.5
PD @TA = 70°C
Power Dissipation
ƒ
1.6
Linear Derating Factor
20
mW/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C


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