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2N4922G Datasheet(PDF) 2 Page - ON Semiconductor |
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2N4922G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page 2N4921G, 2N4922G, 2N4923G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) (IC = 0.1 Adc, IB = 0) 2N4921G 2N4922G 2N4923G VCEO(sus) 40 60 80 − − − Vdc Collector Cutoff Current (VCE = 20 Vdc, IB = 0) 2N4921G (VCE = 30 Vdc, IB = 0) 2N4922G (VCE = 40 Vdc, IB = 0) 2N4923G ICEO − − − 0.5 0.5 0.5 mAdc Collector Cutoff Current (VCE = Rated VCEO, VEB(off) = 1.5 Vdc) (VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_C ICEX − − 0.1 0.5 mAdc Collector Cutoff Current (VCB = Rated VCB, IE = 0) ICBO − 0.1 mAdc Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE 40 30 10 − 150 − − Collector−Emitter Saturation Voltage (Note 3) (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) − 0.6 Vdc Base−Emitter Saturation Voltage (Note 3) (IC = 1.0 Adc, IB = 0.1 Adc) VBE(sat) − 1.3 Vdc Base−Emitter On Voltage (Note 3) (IC = 1.0 Adc, VCE = 1.0 Vdc) VBE(on) − 1.3 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) fT 3.0 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Cob − 100 pF Small−Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 25 − − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: PW ≈ 300 ms, Duty Cycle ≈ 2.0%. |
Número de pieza similar - 2N4922G |
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Descripción similar - 2N4922G |
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